Abstract
Silicon carbide (SiC) is a newly-emerging wide bandgap semiconductor, by which high-voltage, low-loss power devices can be realized owing to its superior properties. This paper reviews recent progress in SiC material and device technologies for power device applications. Benefits and remaining issues of ultrahigh-voltage SiC power devices are highlighted. Through progress in fast epitaxy and defect reduction technologies, high-purity (~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) and thick (> 100 μm) SiC epilayers with long carrier lifetimes (> 30 μs) can be employed for fabrication of ultrahigh-voltage devices. By utilizing such epilayers and appropriate junction termination structures, ultrahigh-voltage blocking over 20 kV has been achieved in SiC PiN diodes and transistors.
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