Abstract
Recent advances in the field of integrated circuits based on sustainable and transparent amorphous oxide semiconductors (AOSs) are presented, demonstrating ultrahigh performance operating state-of-the-art integrated inverters comprising metal–semiconductor field-effect transistors (MESFETs) with amorphous zinc tin oxide (ZTO) as a channel material. All individual circuit layers have been deposited entirely at room temperature, and the completed devices did not require undergoing additional thermal annealing treatment in order to facilitate proper device functionality. The demonstrated ZTO-based MESFETs exhibit current on/off ratios of over 8 orders of magnitude a field-effect mobility of 8.4 cm2 V−1 s−1, and they can be switched within a voltage range of less than 1.5 V attributed to their small subthreshold swing as low as 86 mV decade−1. Due to adjustments of the circuit layout and, thus, the improvement of certain geometry-related transistor properties, the associated Schottky diode FET logic inverters facilitate low-voltage switching by exhibiting a remarkable maximum voltage gain of up to 1190 with transition voltages of only 80 mV while operating at low supply voltages ≤3 V and maintaining a stable device performance under level shift. To the best of our knowledge, the presented integrated inverters clearly exceed the performance of any similar previously reported devices based on AOS, and thus, prove the enormous potential of amorphous ZTO for sustainable, scalable low-power electronics within future flexible and transparent applications.
Highlights
Recent developments in the field of active thin-film technology have advanced beyond use in common active-matrix flat-panel display backplanes toward manifold applications, such as photovoltaics and wireless communication systems, as well as memory and sensor elements
The electrical properties of zinc tin oxide (ZTO) thin films have been determined by performing Hall effect measurements in the Van-der-Pauw geometry at room temperature
The capability of amorphous ZTO to obtain state-of-the-art, ultrahigh-performing integrated inverters based on metal–semiconductor field-effect transistors (MESFETs) has been demonstrated
Summary
Recent developments in the field of active thin-film technology have advanced beyond use in common active-matrix flat-panel display backplanes toward manifold applications, such as photovoltaics and wireless communication systems, as well as memory and sensor elements. Deployed polycrystalline and amorphous silicon, struggles to keep up with the continuously growing demand for scalable electronics operating at higher frequencies, especially when future trends aim for developing mechanically flexible and transparent multifunctional thin-film devices with low power consumption.. Deployed polycrystalline and amorphous silicon, struggles to keep up with the continuously growing demand for scalable electronics operating at higher frequencies, especially when future trends aim for developing mechanically flexible and transparent multifunctional thin-film devices with low power consumption.1,2 These unique requirements can currently be satisfied using predominantly ZnO-based amorphous oxide semiconductors (AOSs), in particular, indium gallium zinc oxide (IGZO).
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