Abstract
X-ray free electron laser (XFEL) requires operation of an advanced silicon pixel sensor (SPS) under ultra-high voltage for detection of fast electron–hole pairs. In this study, a high-voltage tolerant SPS is designed and fabricated by considering suppressing the soft-breakdown of the current collection ring (CCR) and increasing the breakdown voltage of the pixel array after dicing the sensor. It is found that a soft-breakdown behavior of CCR in one diced SPS occurred before a hard breakdown happening in the pixel and it may cause the degradation of maximum hard breakdown voltage in pixel region, which, in particular, turns worse as the increasing of the number of guard rings. An optimized method with the expansion of the non-sensitive area is used to effectively prevent the occurrence of soft-breakdown and increase the operation voltage of the SPS. Ultimately, a high performance SPS with a maximum breakdown voltage exceeding 1000 V and reversed leakage of ∼1.5 pA per pixel at bias 500 V is obtained. Together with the optimized multi-guard ring structure, a record ultra-high avalanche breakdown voltage of over 2100 V is obtained, which provides a promising approach to develop ultra-fast detector in an XFEL.
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