Abstract
Ultrahigh-voltage SiC PiN diodes with an improved junction termination extension (JTE) structure and improved forward characteristics are presented in this paper. An improved space-modulated JTE (SM-JTE) structure was designed by device simulation, and a breakdown voltage of over 17 kV was obtained in a wider range of JTE dose with the improved SM-JTE. In addition, a lifetime enhancement process (thermal oxidation) was performed to improve the forward characteristics. The on-resistance of the SiC PiN diodes with the lifetime enhancement process was reduced to 13 mΩ cm2 at 150 °C compared with that of the SiC PiN diodes with the conventional process (32 mΩ cm2).
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