Ultrahigh Sensitivity DNA Detection Using Nanorods Incorporated ISFETs

Abstract

Nanotextured gate ion-sensitive field-effect transistors have been realized for high-sensitivity DNA detection. The formation of doped poly-Si rods decorated with ultrafine features is believed to be responsible for higher sensitivities of such devices. Owing to their high sensitivities, such devices can detect charge variations during various functionalization, DNA immobilization, and hybridization steps. An analytical model has been proposed to correlate the high sensitivity with a structural parameter, ${\beta }$ , varying between zero and one. For small values of ${\beta }$ , high sensitivities have been obtained.