Abstract
Negative photoconductivity (NPC) exhibits great potential in the field of photodetection due to low power consumption and high response. Herein, the photodetectors based on InSe and multilayer graphene (MLG)/InSe van der Waals heterostructure are fabricated. The InSe photodetector shows positive photoconductivity (PPC) behavior, while the MLG/InSe photodetector exhibits NPC behavior. The ultrahigh responsivity (1.88×10 5 A/W) is achieved for the NPC MLG/InSe photodetector, which is five orders of magnitude higher than that of the sole InSe photodetector based on PPC (6.97 A/W). The MLG/InSe photodetector also shows a high external quantum efficiency (6.41×10 7 %) and a fast response time (22 ms). The proposed high-performance MLG/InSe heterostructure photodetector based on NPC for low-dimensional materials may extend applications in future optoelectronic devices.
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