Abstract
The pulsed laser atom probe has been used to characterise III-V semiconductor epilayer and quantum-well structures. The combination of high spatial resolution and good chemical specificity makes it possible to observe very fine scale composition variations in epilayer materials, and also to assess the roughness of individual interfaces in quantum-well material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.