Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics (Small 12/2023)

Abstract

Ultra-High Interfacial Thermal Conductance In article number 2205726, Baoxing Xu, Philip X.-L. Feng, Xian Zhang, and co-workers report on the ultra-high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single-layer transition metal dichalcogenides MX2 (MoS2, WSe2, WS2) sandwiched between two hexagonal boron nitride (hBN) layers, through Raman spectroscopic measurements. The findings in this study reveal new thermal transport mechanisms in hBN/MX2/hBN structures and shed light on building novel flexible electronic devices.