Abstract
A photomagnetoelectric efiect has been investigated in semiconductors InAs and CdxHg1ixTe (x = 0:2 and 0.26) excited by Q-switched neodymium-YAG laser. The photomagnetoelectric signal undergos double-sign-inversion when the intensity of the exciting light pulses exceeds a critical value Ic = 5 £ 10 24 photons/(cm 2 s) for InAs and (1{4) £ 10 24 photons/(cm 2 s) for CdxHg1ixTe samples. It is shown that a frequency spectrum of photomagnetoelectric response is broadened signiflcantly in the region of high frequencies. In general three frequency bands were distinguished. From this investigation it follows that using laser pulses of a duration topt » 1i10 ps the photomagnetoelectric signal in the terahertz range may be generated.
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