Abstract
An ultrahigh field emission current density of10.3 mA cm − 2 was obtained from nitrogen-implanted ZnO nanowires. The sample was characterized andclearly showed a nitrogen doping signal. Field emission properties of the ZnO nanowireswere considerably improved after N-implantation with lower turn-on field and a muchhigher current density. Removal of an amorphous layer, the presence of nanoscaleprotuberances, and surface-related defects were found to be responsible for thesignificantly enhanced field emission. Our work is important for the possible applicationsof ZnO nanowires in flat panel displays and high brightness electron sources.
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