Ultra-high energy storage density of transparent capacitors based on linear dielectric ZrO2 thin films with the thickness scaled up to hundreds nanometers

Abstract

In this work, a high energy storage density in transparent capacitors, based on linear dielectric ZrO2 thin films, with thickness scaled up to hundreds of nanometers, is reported. Linear dielectric ZrO2 films with a thickness of several hundred nanometers are grown on Sn-doped In2O3 (ITO) electrode layers grown on transparent glass substrates at room temperature. The fabricated ITO/ZrO2/ITO capacitors show excellent dielectric energy storage performance, including a large dielectric constant, low loss and leakage current, and large breakdown strength. Consequently, these capacitors present high energy density and efficiency, as well as robust device endurance. In particular, ultra-high recoverable energy storage density (Wrec ∼ 75.4 J/cm3) and efficiency (η ∼ 88%) are achieved simultaneously in ZrO2 film-based (470 nm thick) capacitors, rivaling those of other lead-free ferroelectric-like and other linear dielectric film capacitors. Moreover, the capacitors show good transparency in the visible range, indicating the potential energy-storage applications in transparent electronics.