Ultrahigh density data storage on Ag–TDCN thin films by scanning tunneling microscopy

Abstract

We present the fabrication of Ag–toluylene 2, 4-dicarbamidonitrite (TDCN) organometallic composite thin films using an ionized cluster beam deposition method. The realization of high density data storage in the composite thin films by scanning tunneling microscopy (STM) is reported. By applying a proper voltage pulse between the STM tip and the surface of the highly oriented pyrolytic graphite substrate on which the Ag–TDCN thin film was previously deposited, marks on the thin films can be formed. The size of the marks is about 50 nm and the corresponding data storage density is larger than 1010 bits/cm2. The thickness of the thin films in the experiment was about 100 nm. The preliminary theoretical analysis of the mechanism of the mark formation in the organometallic functional composite thin films is suggested.