Abstract
The development of miniaturized and lightweight electronic equipment requires the improvement of the dielectric breakdown strength and energy storage performance of dielectric capacitors. Therefore, in this study, a method for obtaining an amorphous phase by reducing the annealing temperature of a material is proposed to considerably improve the electrical breakdown, and a high-polarized substance is introduced to compensate for the polarization of the material. Lead-free xBiMg0.5Zr0.5O3-(1-x)BaZr0.25Ti0.75O3 (abbreviated as xBMZ-(1-x)BZT, x = 0.01, 0.02, 0.03, 0.04, and 0.05) thin films were prepared on Pt/Ti/SiO2/Si substrates by using the sol-gel spin-coating method. The microstructure with coexisting nanocrystalline and amorphous phases was successfully controlled by reducing the annealing temperature and employing a rapid annealing process. All the films with this microstructure exhibited extremely high breakdown strength, and the effectiveness of this method was verified. When x = 0.04, the ultra-high breakdown strength of 6640 kV/cm, high energy storage density of 81.6 J/cm3 and high energy storage efficiency of 87% were achieved. Moreover, the dielectric and energy storage performance were excellent under temperatures from 20 °C to 200 °C. This study presents a feasible approach for designing new high-performance dielectric capacitors for energy storage devices in the future.
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