Abstract
Ultraflatbands in twisted bilayers of two-dimensional materials have the potential to host strong correlations, including the Mott-insulating phase at half-filling of the band. Using first-principles density functional theory calculations, we show the emergence of ultraflatbands at the valence band edge in twisted bilayer MoS_{2}, a prototypical transition metal dichalcogenide. The computed band widths, 5 and 23meV for 56.5° and 3.5° twist angles, respectively, are comparable to that of twisted bilayer graphene near "magic" angles. Large structural transformations in the moiré patterns lead to formation of shear solitons at stacking boundaries and strongly influence the electronic structure. We extend our analysis for twisted bilayer MoS_{2} to show that flatbands can occur at the valence band edge of twisted bilayer WS_{2}, MoSe_{2}, and WSe_{2} as well.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.