Abstract
Plasma-assisted chemical vapour deposition of trimethylaluminium (TMAI) with ammonia (NH3) as reactive gas, was used to prepare aluminium nitride (AIN) ultrafine powder. The effect of r.f. current, susceptor temperature and TMAI concentration on particle formation was studied. High r.f. current activated the gas-phase reaction sufficiently to obtain considerable powder formation. It was observed that increasing susceptor temperature led to an increase of powder formation rate and improved the crystallinity of as-synthesized AIN powder as well. Increasing TMAI concentration, on the other hand, led to an increase of powder formation rate of AIN, while much higher TMAI concentration induced the formation of an aluminium carbide (Al4C3) phase due to dissociation of the methyl radicals instead of the Al-C bond.
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