Abstract
In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in information processing at high data transfer rates. The technique is based on single pulse propagation through the device, with pulse duration tunable from 150fs to 11ps, and the characterization of the pulse at the output of the device by measuring the total pulse energy, the real time profile and the frequency spectrum. Results on a InGaAsP bulk amplifier are shown as an example.
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