Abstract
A model is proposed for a photoinduced Peierls-type semiconductor-metal phase transition that makes it possible to determine the time dependence of the bandgap width in the electronic spectrum of vanadium dioxide subjected to a light field and the dependence of the time at which a photoinduced semiconductor-metal phase transition occurs on the laser pulse duration. The theoretical results obtained are consistent with experimental data on the illumination of a VO2 film with an intense laser pulse.
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