Ultrafast response times and enhanced optical nonlinearity in beryllium-doped low-temperature-grown GaAs

Abstract

Summary form only given. We demonstrate that beryllium doping of low temperature-grown (LT) GaAs considerably shortens the initial decay time of the nonlinear absorption to values of about 100 fs. Be doping of LT GaAs improves the time response, the absorption modulation, and the nonsaturable losses.