Abstract
In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed. Then, the scattering to the satellite L and X valleys is examined in the absence of the inter-carrier interactions. Ensemble Monte Carlo calculations used in this latter approach indicate that the time constant for relaxation of the central valley electrons due to inter-valley scattering cannot be faster than 80-100 fs.
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