Ultrafast relaxation of hot minority carriers in p-GaAs

Abstract

The dynamics of hot minority carriers in p-GaAs is calculated for doping concentrations in the range of 1.5×1017 cm−3 to 1.5×1018 cm−3. It is shown that the electron-hole interaction increases the rate of dissipation of the excess energy of the minority carriers in the early stages of the process. However, this channel for energy dissipation becomes weaker as the cooling of the minority carriers proceeds, an effect more noticeable in the case of high doping levels. When the electron-hole interaction is disregarded, the dissipation rate is always smaller for low doping concentrations.