Abstract
Using a pump–probe protocol with pairs of relative-phase-locked femtosecond pulses, we gathered transient reflectivity measurements from a multiple quantum well structure of GaAs/Al0.3Ga0.7As at 10 K. Quantum beating between heavy-hole and light-hole excitons was observed as an oscillation in the transient reflectivity. Its intensity was coherently controlled by controlling the delay between two successive pump pulses. We found characteristic interference fringes arising from the interference of the photo-induced excitons traversing entangled quantum paths. As established in theory, these fringes are peculiar to this dual-pulse excitation via photo-absorption.
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