Abstract
Picosecond photovoltaic effect in miscut Nb-doped SrTiO3 single crystal has been observed under ultraviolet pulsed laser irradiation at ambient temperature without an applied bias. The 10%–90% rise time and the full width at half maximum are 828 and 670 ps, respectively, which is faster than that of exact cut Nb-doped SrTiO3 single crystal. A model based on terrace structure is put forward to explain the observation.
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