Abstract
AbstractThis paper describes one of the ultrafast optical processes in the dc‐biased quantum‐well structure, ultrafast switching of light emission controlled by electric field effect, and its application for light‐emitting devices. In the fabricated device, injection current for device operation is extremely low (10 A/cm2) and high‐speed switching of light emission (switching time of 300 ps) can be achieved without the influence of a recombination life‐time.Utilizing the amplification of light emission in the microcavity, the external efficiency of the light‐emitting device can be improved, indicating that a switching time of 10 ps with an external efficiency of 10 percent can be achieved.The paper also discusses the ultrafast optical nonlinearity due to virtual charge polarization caused during optical excitation of the quantum‐well structure by nonresonant light, and the physics and applications of utlrafast electric pulse caused by the nonlinerity. In addition, the possibility is discussed of optical detection without optical detection without optical absorption using the virtual excitation.
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