Ultrafast one-step combustion synthesis and thermoelectric properties of In-doped Cu2SnSe3

Abstract

Bulk In-doped Cu2SnSe3 samples were prepared by a fast and one-step method of high-gravity combustion synthesis. All the synthesized samples were dense with relative densities of >98%. The influence of Indium-doping on the phase composition of the samples was investigated. SEM and EDS measurements confirm the existence of SnSe and Cu2Se as secondary phase in the Cu2Sn1−xInxSe3 samples. In addition, the experimental results show that there is a solubility limit of indium in the Cu2SnSe3 matrix. The thermoelectric properties of the samples were measured in a temperature range from 323 K to 773 K, and the Cu2Sn0.8In0.2Se3 sample achieved a maximum ZT of 0.65 at 773 K, which was comparable with the best-reported result for Cu2SnSe3 materials prepared by conventional sintering approaches. With much reduced time and energy consumption, high-gravity combustion synthesis may offer a more efficient and economical way for producing thermoelectric materials.