Abstract
Nonlinear optical responses of bismuth (Bi) doped silicon-rich silicon dioxide (Si-rich SiO2) films were studied by a z-scan and an optical Kerr gate method under femtosecond excitation around 800 nm. It was found that the Bi-doping enhances the nonlinear optical response of Si-rich SiO2 films by several orders of magnitudes. The nonlinear refractive index was of the order of 10−11 cm2/W and the response time was shorter than our time resolution of 100 fs. The nonlinear refractive index was independent of the wavelength in the range from 750 to 835 nm, suggesting that virtual transitions are involved in the nonlinear optical processes.
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