Abstract
ZnS/ZnSe heterostructures under condition of ZnSe interband excitation by a 150 fs laser pulse exhibit strong narrow-band modification of absorption and wide-band modification of reflection. Mean decay time for nonlinear reflection in heterostructures ranges from 2 to 3 ps whereas in bare ZnSe monolayer it exceeds 5 ps. Possible physical processes responsible for nonlinear refraction in the transparency region include interplay of absorption driven nonlinear refraction via Kramers–Kronig relations and intrinsic dielectric properties of dense electron–hole plasma. For nonlinear absorption at ZnSe band edge, interplay of plasma screening effects and states filling effects are relevant.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Photonics and Nanostructures - Fundamentals and Applications
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
