Ultrafast Laser Hyperdoped Black Silicon and Its Application in Photodetectors: A Review

Abstract

Based on the ultrafast and extremely strong interaction between laser pulses and materials, ultrafast laser irradiation can break the solid solubility constraints and enable hyperdoping of impurities. This process overcomes the bandgap constraints of crystalline silicon, resulting in heightened absorption across a broad spectral range spanning from ultraviolet to infrared wavelengths, therefore commonly referred to as black silicon (b‐Si). The b‐Si demonstrates significant changes in optoelectronic properties, making it highly promising for applications in silicon photonics. Specifically, b‐Si photodetectors exhibit distinct advantages in terms of high photoelectric gain at low voltage, ultrabroadband spectral responsivity, large dynamic range, and suitability for operation over a wide temperature range. These properties address the limitations of traditional silicon photodetectors, showcasing great potential for applications in optoelectronic integration, artificial intelligence, information technology, energy devices, and beyond. This review focuses on b‐Si achieved through ultrafast laser processing, with a special emphasis on its applications in photodetectors. The mechanism of ultrafast laser irradiation and the properties of hyperdoped silicon are discussed. Then, the research progresses and state‐of‐the‐art b‐Si photodetectors are introduced, as well as working mechanism and potential application expansion. Finally, the development prospects of b‐Si photodetectors based on ultrafast laser hyperdoping are predicted.