Abstract
We present the first demonstration of reproducible harmonic mode-locked operation from a novel design of monolithic semiconductor laser comprising a compound cavity formed by a I-D photonic-bandgap (PBG) mirror. Mode-locking (ML) is achieved at a harmonic of the fundamental round-trip frequency with pulse repetition rates from 131 GHz up to a record high frequency of 2.1 THz. The devices are fabricated from GaAs-AlGaAs material emitting at a wavelength of 860 nm and incorporate two gain sections with an etched PBG reflector between them, and a saturable absorber section. Autocorrelation studies are reported which allow the device behavior for different ML frequencies, compound cavity ratios, and type and number of intra-cavity reflectors to be analyzed. The highly reflective PBG microstructures are shown to be essential for subharmonic-free ML operation of the high-frequency devices. We have also demonstrated that the single PBG reflector can be replaced by two separate features with lower optical loss. These lasers may rind applications in terahertz imaging, medicine, ultrafast optical links, and atmospheric sensing.
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