Abstract
To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO2/Si) substrate using methanol as the only carbon source. A 1 × 1 cm2 SiO2/Si substrate square was almost fully covered with graphene within 5 min, resulting in a record growth rate of ~33.6 µm/s. This outcome is attributed to the quick pyrolysis of methanol, with the help of trace copper atoms. The as-grown graphene exhibited a highly uniform thickness, with a sheet resistance of 0.9–1.2 kΩ/sq and a hole mobility of up to 115.4 cm2/V·s in air at room temperature. It would be quite suitable for transparent conductive electrodes in electrophoretic displays and may be interesting for related industrial applications.
Highlights
Graphene is considered to be promising for use in future electronics [1]
Methanol vapor was carried into the tube by Ar gas and transported through the tube during growth. It worked as the carbon source, which was quickly decomposed with the presence of the catalytic copper atoms
We have presented an ultrafast method for the direct growth of uniform graphene film on a SiO2/Si substrate
Summary
Graphene is considered to be promising for use in future electronics [1]. To achieve its usage in electrical devices, first, large-scale, high-quality, and uniform graphene film should be placed on the dielectric substrate. A new method with a fast growth rate that produces an acceptable quality graphene is a must, which means decreased costs and energy consumption, and increased compatibility This goal is not easy to achieve, since there is a lack of metallic catalysts on the substrates needed to effectively pyrolyze the carbon source [9,10,11,12]. Some researchers have found high-quality graphene with a fast growth rate was only achievable with a decreased H2 concentration, and could even occur without H2 present during the reaction [20] As a result, this dilemma has not yet been clearly addressed with respect to the CVD method for the growth of graphene on metals, not to mention with respect to the direct growth of graphene on dielectric substrates. The proposal method possesses a competitive advantage in related industrial applications
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