Ultrafast growth of large-area monolayer MoS2 film via gold foil assistant CVD for a highly sensitive photodetector

Abstract

Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetectors owing to its tunable band gap and high absorption coefficient. However, controlled synthesis of high-quality, large-area monolayer molybdenum disulfide (MoS2) is still a challenge in practical application. In this work, we report a gold foil assistant chemical vapor deposition method for the synthesis of large-size (>400 μm) single-crystal MoS2 film on a silicon dioxide (SiO2) substrate. The influence of Au foil in enlarging the size of single-crystal MoS2 is investigated systemically using thermal simulation in Ansys workbench 16.0, including thermal conductivity, temperature difference and thermal relaxation time of the interface of SiO2 substrate and Au foil, which indicate that Au foil can increase the temperature of the SiO2 substrate rapidly and decrease the temperature difference between the oven and substrate. Finally, the properties of the monolayer MoS2 film are further confirmed using back-gated field-effect transistors: a high photoresponse of 15.6 A W−1 and a fast photoresponse time of 100 ms. The growth techniques described in this study could be beneficial for the development of other atomically thin two-dimensional transition metal dichalcogenide materials.