Abstract
Ultrafast graded double-heterostructure GaInAs/InP p-i-n photodiodes grown by gas source molecular beam epitaxy have been fabricated on an InP semi-insulating substrate. The graded band-gap layers and the double heterostructure reduce carrier trapping effects and diffusion current and the resulting response of a 5 μm×5 μm device was measured by electro-optic sampling to be 5 ps full width at half maximum (FWHM). The deconvolved impulse response is 3.8 ps FWHM.
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