Abstract
Femtosecond spectroscopy is applied to study transient electronic and lattice processes in bismuth. Components with relaxation times of 1 ps, 7 ps and ~ 1 ns are detected in the photoinduced reflectivity response of the crystal. To facilitate the assignment of the observed relaxation to the decay of particular excited electronic states we use pump pulses with central wavelengths ranging from 400 nm to 2.3 mum. Additionally, we examine the variation of parameters of coherent A1g phonons upon the change of excitation and probing conditions. Data analysis reveals a significant wavevector dependence of electron-hole and electron- phonon coupling strength along \Gamma--T direction of the Brillouin zone.
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