Abstract
We have investigated carrier relaxation and exciton recombination dynamics inZnO/ZnMgO multiple quantum wells using femtosecond pump–probe techniques at roomtemperature. For a probe energy above the band gap, the hot carriers exhibit aneffective relaxation by longitudinal optical phonon scattering with a cooling time of700–850 fs. By detecting the emission near the band-gap, a longer decay time of a fewpicoseconds was observed which is attributed to acoustic phonon scattering. Asthe probe energy is decreased further, the decay time continues to increase dueto the transitions of exciton recombination or localized carrier recombination.
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