Ultrafast degradable resistive switching memory based on α-lactose thin films

Abstract

As a strong candidate for next-generation memory devices, resistive switching memory has attracted broad attention. Meanwhile, naturally occurring biomaterials are suitable for biodegradable and transient electronics considering of their biocompatibility, solution process ability and most importantly, environmental friendliness. In this work, we demonstrate the thin films of α-lactose from milk as the solid electrolyte layer in resistive switching memory devices. This device can be switched reproducibly between high and low resistance states with uniform switching voltages and possess multilevel storage ability. The electrochemical formation/rupture of the Ag metallic filaments are believed to be responsible for the switching behavior of the memory devices. In addition, the α-lactose film can be dissolved completely in deionized water within 3 s, showing its physically transient and biodegradable characteristics. Our results demonstrate that the α-lactose based resistive switching memories are cost-effective, environmentally benign and non-toxic. Such advantages make these devices particularly well suited for fabricating skin-compatible, digestible bioelectronic devices as well as secure information devices. • First time using lactose to fabricate degradable switching memory. • The Ag/α-lactose/ITO devices exhibit excellent bipolar switching properties. • The mechanism is trap-related SCLC in HRS and filamentary conduction in LRS. • The devices have the ability for multilevel storage. • α-lactose thin film dissolved within 3 s in deionized water.