Abstract
An electron-beam annealing method has been adapted for rapid crystallization of p-type amorphous-silicon thin films deposited by using an evaporation method. The amorphous phase of silicon thin-film was crystallized by using an accelerating DC voltage higher than the 4.0 kV for 120 s. From the crystalline properties, the nanocrystalline silicon thin film after electron-beam annealing showed mainly (111), (220), and (311) orientations and a crystalline volume fraction (Xc) of 93.6%. The crystalline properties improved with increasing DC voltage for rapid annealing times. The electron-beam annealing method can be a powerful method for achieving rapid crystallization of amorphous materials.
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