Ultrafast CMOS inverter with 4.7 ps gate delay fabricated on 90 nm SOI technology

Abstract

Very low gate delays of 7.7 ps at 1 V supply and 4.7 ps at 2 V supply have been achieved for CMOS inverters fabricated on a 90 nm silicon on insulator technology. The results are measured with an optimised CMOS ring oscillator. These are believed to be the lowest gate delays reported to date for CMOS inverters at room temperature.