Abstract
We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier–carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al 0.32Ga 0.68As/GaAs quantum wells. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier–carrier scattering as the injected carrier densities increased toward 10 11 cm −2.
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