Abstract
Single-phase VO2 thin films are sputtering deposited on BK7 substrates, and sharp insulator-to-metal phase transition is obtained with a resistivity change of four orders of magnitude. Terahertz (THz) pump-probe measurements reveal that by illuminating the films with a low pumping power of 143 μJ/cm2, VO2 films exhibit an ultrafast optical switching to THz transmission within 8 ps. Furthermore, the THz switching ratio reaches over 80% in a wide frequency range from 0.3 to 2.5 THz. All these outstanding features indicate a strong potential of VO2 films for broadband terahertz wave switching and modulation applications.
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