Abstract
Subpicosecond time-resolved absorption spectra have revealed carrier lifetimes as short as 10 ps in low-temperature GaAs/AlGaAs multiple quantum well structures (MQWS’s) due to the large stimulated recombination rate caused by amplified spontaneous luminescence guided along the MQW’s. Time-resolved detection of the edge-emitted luminescence with a streak camera fully confirms the occurrence of a fast radiative recombination associated with substantial light amplification.
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