Ultracompact Photodetection in Atomically Thin MoSe2

Abstract

Excitons in atomically thin semiconductors interact very strongly with electromagnetic radiation and are necessarily close to a surface. Here, we exploit the deep-subwavelength confinement of surface plasmon polaritons (SPPs) at the edge of a metal–insulator–metal plasmonic waveguide and their proximity of 2D excitons in an adjacent atomically thin semiconductor to build an ultracompact photodetector. When subject to far-field excitation we show that excitons are created throughout the dielectric gap region of our waveguide and converted to free carriers primarily at the anode of our device. In the near-field regime, strongly confined SPPs are launched, routed and detected in a 20 nm narrow region at the interface between the waveguide and the monolayer semiconductor. This leads to an ultracompact active detector region of only ∼0.03 μm2 that absorbs 86% of the propagating energy in the SPP. Due to the electromagnetic character of the SPPs, the spectral response is essentially identical to the far-field regime, exhibiting strong resonances close to the exciton energies. While most of our experiments are performed on monolayer thick MoSe2, the photocurrent-per-layer increases super linearly in multilayer devices due to the suppression of radiative exciton recombination. These results demonstrate an integrated device for nanoscale routing and detection of light with the potential for on-chip integration at technologically relevant, few-nanometer length scales.