Abstract

The miniaturization and intelligence of near infrared (NIR) devices urgently require an excellent broadband NIR phosphor. However, emission spectra of most NIR phosphors cover less than 1200 nm with a full width at half maximum (FWHM) less than 200 nm and a peak wavelength less than 900 nm. Here, we successfully developed ultra-broadband NIR phosphors ScNbO4:Cr3+ which can overcome the above shortcomings based on a double-site occupancy strategy. The phosphors achieve ultra-broadband NIR emission from 800 to 1400 nm with a peak wavelength at 980 nm. Its FWHM is up to 217 nm. The valence state of Cr ions in phosphors was analyzed. The double-site occupancy of Cr3+ ions in the host and the relationship between host structure and optical properties are discussed in detail. NIR light transmission experiments show that phosphors have potential application value in non-destructive analysis. This work develops an excellent NIR luminescent material and provides an efficient method to obtain ultra-broadband NIR phosphors with longer peak wavelength.

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