Abstract
Ultrabroadband near-infrared luminescence in the 1.0–2.4 μm range has been observed in bismuth (Bi)-doped oxyfluoride germanate thin films prepared by pulsed laser deposition (PLD). The emission peak position shows a red-shift with decreasing oxygen pressure during PLD growth. Systematic investigation reveals that the origin of the luminescence could be ascribed to Bi clusters. With the sensitization of Bi near-infrared active centers, enhanced broadband ∼2 μm luminescence of Ho3+ is realized in Bi/Ho co-doped films, and a high energy transfer efficiency is obtained. These results may provide promise to realize planar waveguide lasers in the near-infrared region for integrated optics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
