Abstract
We measured the light-emission spectrum from a reverse-biased 4H-SiC p–n junction diode under the avalanche condition. The diode was fabricated with the edge of the mesa being negatively beveled. Avalanche breakdown occurred at the periphery where the p–n junction intercepted the surface. As a result, the emission showed a broadband spectrum containing ultraviolet, visible, and near-infrared regions. This is the first observation of the ultraviolet emission from a reverse-biased SiC diode.
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