Abstract

We investigate the microstructural characteristics and optical properties of PbS quantum dots-doped silica fiber (PQDF), prepared by atomic layer deposition (ALD) doping technique. The fiber exhibits ultra-wideband luminescence and flat-gain with 3 dB bandwidth of 300 nm. The on-off gain and net gain can reach to 7.1-15.0 dB and 6.0-9.2 dB at 1050-1350 nm, respectively. The results of high-resolution transmission electron microscopy (HRTEM) further reveal the effects of PbS QDs doping in PQDF. The broadband luminescence spectrum originating from three active centers (1086, 1179, and 1304 nm), can be attributed to the dimension effect of PbS QDs (3.7, 4.0, and 4.3 nm, respectively). Moreover, the calculation results indicate that the multi-sized PbS QDs concentrated at 3.65-4.45 nm make the 3 dB gain bandwidth increase, which is six times wider than that of traditional erbium-doped fiber (EDF). Therefore, this type of PQDF is a promising gain medium for optical amplifiers and broadband light sources.

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