Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

Yu-Ru Lin,Yu-Hsien Lin,Yung-Chun Wu,Wan-Ting Tsai

doi:10.3390/ma10111276

Yu-Ru Lin, Yu-Hsien Lin + Show 2 more

Open Access

https://doi.org/10.3390/ma10111276

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Abstract

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

Highlights

Metal silicide techniques have been developed at the deep submicron level in microelectronics as contact materials to the source, drain, and gate regions [1,2,3]
Nickel silicides are valuable electronic materials used as contacts for field-effect transistors, as interconnects, and in nanoelectronic devices because of their source/drain (S/D) sheet resistance
The first step involves low temperature annealing to drive nickel to diffuse into Si, to form a nickel-rich silicide layer

Summary

Introduction

Metal silicide techniques have been developed at the deep submicron level in microelectronics as contact materials to the source, drain, and gate regions [1,2,3]. Nickel silicides are valuable electronic materials used as contacts for field-effect transistors, as interconnects, and in nanoelectronic devices because of their source/drain (S/D) sheet resistance. The development of metal silicide technology through two-step rapid thermal annealing (RTA) has been extensively investigated as a low resistance contact [13,14]. The first step involves low temperature annealing to drive nickel to diffuse into Si, to form a nickel-rich silicide layer. To solve the JL-FET turn-off problem, an ultrathin bodyastructure is required to conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), longer effective channel an ultrathin body structure is required to achievethan a fully-depleted channel region in avoidance the off state [15,16,17]. The study presentsa fully-depleted an ultra thin channel poly-Si junctionless field-effect transistor Nickel silicide quality was analyzed using X-ray transmission-electron microscopy (TEM), and a four-point probe diffraction (XRD), transmission-electron microscopy (TEM), and a four-point probe (FPP)

Silicide Film Analysis

In the second rapid annealing was performed

DeviceFigure

Results and Discussion

Conclusions