Abstract
In this article, we critically examine the limit of gate oxidescaling from a reliability point of view. The thickness dependence of thecharacteristic breakdown time (charge) and Weibull slope as well as thetemperature dependence of oxide breakdown are measured with emphasis onaccuracy. The failure modes of soft and hard breakdown events and their impacton device characteristics are reviewed. Using a two-dimensional reliabilityanalysis, we explore the relative importance of characteristic breakdown timeand Weibull slope in lifetime projection, and the possibilities of extendinggate oxide beyond the currently predicted limit.
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