Abstract
In this work, we have synthetized ultra-thin Cu(In,Ga)Se2 (CIGS) absorbers with an alternative hybrid co-sputtering/evaporation process. Copper, indium and gallium are sputtered simultaneously with the thermal evaporation of selenium, thus avoiding the use of H2Se. Different CIGS absorbers with a thicknesses lower than 550nm were deposited by a one-step stabilized process on Mo/soda lime glass substrates. Hence, the growth mechanisms of ultra-thin CIGS films when varying the power values during hybrid process has been studied. The temperature of the selenium effusion cell and the deposition temperature have been fixed to 190°C and 550°C respectively. Deposition time has also been fixed to 20min. Ultra-thin CIGS solar cells with conversion efficiencies up to 6.5% have been fabricated with an absorber layer thickness of 470nm.
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