Abstract
We successfully bonded aluminum foils to Si substrates to fabricate p-Si/Al, n-Si/Al, p+-Si/Al, and n+-Si/Al junctions by surface activated bonding (SAB). The effects of the annealing temperature process on the electrical properties of the junctions were investigated by measuring their current voltage (I-V) characteristics. It was found that the leakage current of the reverse bias of n-Si/Al junctions was improved and the I-V characteristics of p-Si/Al revealed excellent linearity properties after the junctions annealing at 400°C. The interface resistance of p+-Si/Al, and n+- Si/Al junctions decreased with increasing annealing temperature and decreased to 0.021 and 0.032 Ω·cm2 after the junction annealing at 300 and 400°C, respectively. These results demonstrated that thick metal Ohmic contact in devices could be realized by SAB.
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