Abstract
We experimentally and theoretically investigate the pulsed emission dynamics of a three section tapered semiconductor quantum dot laser. The laser output is characterized in terms of peak power, pulse width, timing jitter and amplitude stability and a range of outstanding pulse performance is found. A cascade of dynamic operating regimes is identified and comprehensively investigated. We propose a microscopically motivated traveling-wave model, which optimizes the computation time and naturally allows insights into the internal carrier dynamics. The model excellently reproduces the measured results and is further used to study the pulse-generation mechanism as well as the influence of the geometric design on the pulsed emission. We identify a pulse shortening mechanism responsible for the device performance, that is unique to the device geometry and configuration. The results may serve as future guidelines for the design of monolithic high-power passively mode-locked quantum dot semiconductor lasers.
Highlights
In this work, we experimentally and theoretically investigate the optical pulse performance and emission dynamics of a three section tapered semiconductor quantum dot laser with a saturable absorber section positioned at approximately one third of the cavity length
We studied experimentally and by simulations the pulsed emission dynamics of a semiconductor quantum dot based three section tapered passively mode-locked laser
We identified an uncommon pulse-shaping mechanism contrary to the established understanding, where due to the interplay high pulse powers, saturable gain and absorption and waveguide losses, the pulses broaden in the absorber section and shorten in gain section
Summary
We experimentally and theoretically investigate the optical pulse performance and emission dynamics of a three section tapered semiconductor quantum dot laser with a saturable absorber section positioned at approximately one third of the cavity length. The laser output is characterized in terms of peak power, pulse width and timing and amplitude stability. We assume an effective active region width of w0 = 4 μm to approximate the effects of the gain-guided structure, while lateral dimensions are not taken into account.
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