Ultra-short n-MOSFETs with strained Si: device performance and the effect of ballistic transport using Monte Carlo simulation

Abstract

Semi-classical Monte Carlo simulation is used to study the electrical performance of 18-nm-long n-MOSFETs including a strained Si channel. In particular, the impact of extrinsic series resistance on the drive current Ion is quantified: we show that the large on-current improvement induced by the strain is preserved, even by including an external parasitic resistance. The importance of ballistic transport is also examined and its influence on Ion is highlighted.